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Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption
- Source :
- Russian Microelectronics. 50:54-62
- Publication Year :
- 2021
- Publisher :
- Pleiades Publishing Ltd, 2021.
-
Abstract
- A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed. This description combines the advantages of the cell method (the ability to describe phenomena of a stochastic nature) and the string method (parameterization of the model in terms of physically observable quantities). The consistency of the model for etching silicon and silicon oxide in a fluorine-containing plasma, as well as etching in a SF6/O2 mixture at different temperatures is demonstrated. Spontaneous etching of silicon under the action of fluorine radicals, ion-stimulated etching, surface passivation in plasma containing oxygen radicals are simulated. A model that describes the temperature dependence of the etching character is proposed.
- Subjects :
- Materials science
Silicon
Passivation
Physics::Instrumentation and Detectors
Monte Carlo method
chemistry.chemical_element
02 engineering and technology
01 natural sciences
Molecular physics
Etching (microfabrication)
Desorption
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
Silicon oxide
010302 applied physics
Computer simulation
fungi
technology, industry, and agriculture
Plasma
021001 nanoscience & nanotechnology
Condensed Matter Physics
Computer Science::Other
Electronic, Optical and Magnetic Materials
chemistry
0210 nano-technology
Subjects
Details
- ISSN :
- 16083415 and 10637397
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Russian Microelectronics
- Accession number :
- edsair.doi...........8e7e20a4ddba5edf0ee54f2570598eb0