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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In x Ga1– x As nTFETs
- Source :
- IEEE Transactions on Electron Devices. 64:3595-3600
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- The basic analog parameters of three splits of In x Ga1– x As nTFETs are analyzed for the first time. The first two splits are In0.53Ga0.47As devices with a 3-nm HfO2/1-nm Al2O3 and a 2-nm HfO2/1-nm Al2O3, while the last one is an In0.7Ga0.3As channel with a 3-nm HfO2/1-nm Al2O3 gate. The low equivalent oxide thickness improves the electrostatic coupling, enhancing ${I}_{{\text {DS}}}$ , and, consequently, also gm and ${A}_{V}$ , especially for higher $\text {V}_{{\text {GS}}}$ . The InGaAs tunnel field-effect transistors (TFETs) show compatible performance with Si TFETs, and have better performance than Si MOSFETs, making them useful for low-power and low-voltage analog applications. The highest efficiency is found using the combination of a 2-nm HfO2 with In0.53Ga0.47As, due to the 56-mV/dec subthreshold swing obtained. For all splits, the ${A}_{V}$ peak can be related to the ${V}_{{\text {GS}}}$ necessary for band-to-band tunneling to become the dominant transport mechanism.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
Transistor
Oxide
chemistry.chemical_element
Equivalent oxide thickness
Electrostatic coupling
Nanotechnology
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Ion
chemistry.chemical_compound
chemistry
law
Subthreshold swing
0103 physical sciences
Electrical and Electronic Engineering
0210 nano-technology
Quantum tunnelling
Indium
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........8e6ed75e4eb837c247271f7a9cd4f303