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Large scale integration and reliability consideration of triple gate transistors
- Source :
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- Large scale integration and reliability of triple gate FETs (TG-FETs) are investigated. The SRAM chip composed of TG-FETs demonstrated 20Mbits of working cells, and 45/spl deg/ rotated TG-FET is found to be superior from reliability perspective. Future TG-FET design is proposed, utilizing technologies including alternating phase shift mask lithography, local-interconnects and metal gate/undoped channel.
Details
- Database :
- OpenAIRE
- Journal :
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
- Accession number :
- edsair.doi...........8e61853d8d703f899a49d2935e136a28
- Full Text :
- https://doi.org/10.1109/iedm.2004.1419249