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Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices
- Source :
- MRS Proceedings. 69
- Publication Year :
- 1986
- Publisher :
- Springer Science and Business Media LLC, 1986.
-
Abstract
- The use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........8e5f8eebe7a9ab754172debe81743fec
- Full Text :
- https://doi.org/10.1557/proc-69-75