Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer

Authors :: Wei Li
Xiaoliang Wang
Cuimei Wang
Jiang Lijuan
Zhanguo Wang
Quan Wang
Lin-Cheng Wei
Xiangang Xu
Chun Feng
Fengqi Liu
Hongling Xiao
Source :: Journal of Nanoscience and Nanotechnology. 18:7400-7404
Publication Year :: 2018
Publisher :: American Scientific Publishers, 2018.

Subjects :: Materials science
business.industry
Biomedical Engineering
Mode (statistics)
Optoelectronics
General Materials Science
Bioengineering
General Chemistry
High-electron-mobility transistor
Condensed Matter Physics
business
Layer (electronics)

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