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Epitaxial Growth of Atomically Flat Spin Dependent Tunneling Junctions
- Source :
- MRS Proceedings. 570
- Publication Year :
- 1999
- Publisher :
- Springer Science and Business Media LLC, 1999.
-
Abstract
- Spin dependent tunneling junctions with epitaxially grown underlayers have been investigated to examine the possibility of achieving very flat and uniform barrier layers. Pt/Ni80Fe20 /Fe50Mn50/Ni80Fe20layers were deposited on sapphire (0001) substrates at different temperatures and monitored by in-situ reflection high energy electron diffraction (RHEED). The surface morphology has been found to depend strongly on the growth temperature. X-ray diffraction and magnetic hysteresis loop measurements were also performed to characterize the film structures
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 570
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........8e39c9c5eb471cacdfa104084012fb06