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Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5−xGaxO12 garnet

Authors :
B. Mazalon
Andrzej Suchocki
Ya. Zhydachevskyy
B. Machlovanyi
A.G. Fedorov
T. Zorenko
V. Gorbenko
Kazimierz Paprocki
Yu. Zorenko
Source :
CrystEngComm. 19:7031-7040
Publication Year :
2017
Publisher :
Royal Society of Chemistry (RSC), 2017.

Abstract

UV emitting scintillating screens based on single crystalline films (SCFs) of Lu3Al5−xGaxO12:Pr garnet have been developed by the liquid phase epitaxy (LPE) growth method onto Y3Al5O12 (YAG) substrates using a lead-free BaO based flux. The absorbance, luminescence and scintillation properties of these SCFs have been investigated depending on the Ga content in the x = 0–1.9 range. We have found that the absorption and luminescence spectra of Pr3+ ions as well as the scintillation light yield (LY) and decay kinetics of Lu3Al5−xGaxO12 SCFs are non-linearly affected by the gallium concentration x in the mentioned solid solution due to preference for the distribution of Ga3+ and Al3+ ions between the tetrahedral and octahedral positions of the garnet host, respectively. The best scintillation properties of Lu3Al5−xGaxO12:Pr SCFs are achieved at the Ga content in the x = 1.0–1.2 range. The LY of the Lu3Ga1.2Al3.8O12:Pr SCF is comparable with the LY of the best reference LuAG:Pr single crystal counterpart and significantly (up to 3 times) overcomes the LY of LuAG:Pr and Lu3Al4–3.5Ga1.0–1.5O12 SCFs, grown onto the YAG substrates from the conventional PbO–B2O3 flux.

Details

ISSN :
14668033
Volume :
19
Database :
OpenAIRE
Journal :
CrystEngComm
Accession number :
edsair.doi...........8e1574e037a85f42383d9b2af850c000
Full Text :
https://doi.org/10.1039/c7ce01376k