Deposition and doping of a-Si:H from Si2H6 plasmas

Compared to SiH4, the plasma deposition of amorphous hydrogenated silicon from Si2H6 results in compositionally similar films, deposited at rates at least an order of magnitude higher. The films also display larger dark and photoconductivties, a result related directly to higher Ef in the intrinsic Si2H6‐prepared material. The effect is structural, not impurity‐dominated. Dopant incorporation is also found to be strongly influenced by the silicon source, as is the doping efficiency. For a given gas phase concentration of n‐type dopant (PH3), the distribution coefficient is Ceff