Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well

Ion beam milling-induced damage in a 500 A AlGaAs/40 A GaAs/500 A AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500-1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80-85%) of the original luminescence intensity was recovered on annealing at 400 o C for 5 min