Patterning Method for Silver Nanoparticle Electrodes in Fully Solution-Processed Organic Thin-Film Transistors Using Selectively Treated Hydrophilic and Hydrophobic Surfaces

Fully solution-processed organic thin-film transistor (OTFT) devices have been fabricated with simple patterning process at a relatively low process temperature of 100 °C. In the patterning process, a hydrophobic amorphous fluoropolymer material, which was used as the gate dielectric layer and the underlying base layer, was treated with an oxygen plasma to selectively change its surface wetting properties from hydrophobic to hydrophilic. Silver source and drain electrodes were successfully formed in the treated areas with highly uniform line widths and without residues between the electrodes. Nonuniformities in the thickness of the silver electrodes originating from the “coffee-ring” effect were suppressed by optimizing the blend of solvents used with the silver nanoparticles, such that the printed electrodes are appropriate for bottom-gate OTFT devices. A fully solution-processed OTFT device using a polymer semiconductor material (PB16TTT) exhibited good electrical performance with no hysteresis in its transfer characteristics and with good linearity in its output characteristics. A relatively high carrier mobility of 0.14 cm2 V-1 s-1 and an on/off ratio of 1×105 were obtained with the fabricated TFT device.