Back to Search
Start Over
Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer
- Source :
- Science China Technological Sciences.
- Publication Year :
- 2023
- Publisher :
- Springer Science and Business Media LLC, 2023.
- Subjects :
- General Engineering
General Materials Science
Subjects
Details
- ISSN :
- 18691900 and 16747321
- Database :
- OpenAIRE
- Journal :
- Science China Technological Sciences
- Accession number :
- edsair.doi...........8d3379558363f3ebfa830f012c0f54cc