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Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer

Authors :
Gang Chen
Xin Lin
Yuan Liu
Fang Wang
Kai Hu
Xin Shan
ZeYu Wu
YuPeng Zhang
WeiCan Nie
JiXiang Zhong
TianLing Ren
KaiLiang Zhang
Source :
Science China Technological Sciences.
Publication Year :
2023
Publisher :
Springer Science and Business Media LLC, 2023.

Subjects

Subjects :
General Engineering
General Materials Science

Details

ISSN :
18691900 and 16747321
Database :
OpenAIRE
Journal :
Science China Technological Sciences
Accession number :
edsair.doi...........8d3379558363f3ebfa830f012c0f54cc

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