Publisher’s Note: 'Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor' [J. Appl. Phys. 109, 07C312 (2011)]

MLA

Tomoaki Inokuchi, et al. “Publisher’s Note: ‘Scalability of Spin Field Programmable Gate Array: A Reconfigurable Architecture Based on Spin Metal-Oxide-Semiconductor Field Effect Transistor’ [J. Appl. Phys. 109, 07C312 (2011)].” Journal of Applied Physics, vol. 110, Sept. 2011, p. 059906. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8d13bfc02ba7ded8cfd639e57304b590&authtype=sso&custid=ns315887.

APA

Tomoaki Inokuchi, Yoshiaki Saito, Hideyuki Sugiyama, Takao Marukame, Mizue Ishikawa, Tetsufumi Tanamoto, & Kazutaka Ikegami. (2011). Publisher’s Note: “Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor” [J. Appl. Phys. 109, 07C312 (2011)]. Journal of Applied Physics, 110, 059906.

Chicago

Tomoaki Inokuchi, Yoshiaki Saito, Hideyuki Sugiyama, Takao Marukame, Mizue Ishikawa, Tetsufumi Tanamoto, and Kazutaka Ikegami. 2011. “Publisher’s Note: ‘Scalability of Spin Field Programmable Gate Array: A Reconfigurable Architecture Based on Spin Metal-Oxide-Semiconductor Field Effect Transistor’ [J. Appl. Phys. 109, 07C312 (2011)].” Journal of Applied Physics 110 (September): 059906. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8d13bfc02ba7ded8cfd639e57304b590&authtype=sso&custid=ns315887.