Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Authors :: Wataru Mizubayashi
Takashi Matsukawa
Hiroyuki Ota
Y. X. Liu
Junichi Tsukada
M. Masahara
Shinji Migita
Shin-ichi O'uchi
Koichi Fukuda
Yoshie Ishikawa
Hiromi Yamauchi
Kazuhiko Endo
Yukinori Morita
Source :: Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Publication Year :: 2014
Publisher :: IEEE, 2014.
Abstract: Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.

Subjects :: Materials science
chemistry
Condensed matter physics
chemistry.chemical_element
Drain-induced barrier lowering
Work function
Tin
Amorphous solid

Database :: OpenAIRE
Journal :: Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Accession number :: edsair.doi...........8ce70dbad87e97399d98e13bbcb9fab6
Full Text :: https://doi.org/10.1109/vlsi-tsa.2014.6839648

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