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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys
- Source :
- Applied Physics Letters. 83:2844-2846
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, U.S. Department of Energy, under Contract No. DE-AC03-76SF00098. One of the authors ~M.A.S.! acknowledges support by an NSF graduate research fellowship.
- Subjects :
- Graduate research
Semiconductor thin films
ComputingMilieux_THECOMPUTINGPROFESSION
Physics and Astronomy (miscellaneous)
Passivation
Group (periodic table)
Semiconductor materials
Inorganic chemistry
ComputingMilieux_COMPUTERSANDEDUCATION
Rapid thermal annealing
ComputingMilieux_MISCELLANEOUS
Management
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........8c260b9326035836ac614a286c4a7fc4
- Full Text :
- https://doi.org/10.1063/1.1616980