4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor

Subjects

Subjects :

Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics

Details

ISSN :

00220248

Volume :

607

Database :

OpenAIRE

Journal :

Journal of Crystal Growth

Accession number :

edsair.doi...........8c1b94d3405940580bd1cda603efc1be

Full Text :

https://doi.org/10.1016/j.jcrysgro.2023.127104