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Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator
- Source :
- Chinese Physics B. 20:018502
- Publication Year :
- 2011
- Publisher :
- IOP Publishing, 2011.
-
Abstract
- The base—collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collector—base bias—and shows a kink as the reverse collector—base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.
- Subjects :
- Materials science
business.industry
Heterojunction bipolar transistor
Doping
Bipolar junction transistor
General Physics and Astronomy
Silicon on insulator
Heterojunction
Hardware_PERFORMANCEANDRELIABILITY
Capacitance
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
business
Hardware_LOGICDESIGN
Voltage
Electronic circuit
Subjects
Details
- ISSN :
- 16741056
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........8bf06c3b7fe906cc0594c5adf573c542