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Impurity analysis of the effect of partial replacement of retort with an insulation material on mc-silicon grown in directional solidification furnace: Computational modeling

Authors :
T. Keerthivasan
Xin Liu
M. Srinivasan
Noritaka Usami
G. Aravindan
P. Ramasamy
Source :
Journal of Crystal Growth. 599:126892
Publication Year :
2022
Publisher :
Elsevier BV, 2022.

Details

ISSN :
00220248
Volume :
599
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........8b9d6ea8dbde28b34f58bd1dded43ccd
Full Text :
https://doi.org/10.1016/j.jcrysgro.2022.126892