Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors

Authors :: Brianna Klein
Vincent M. Abate
Andrew M. Armstrong
T. R. Fortune
A. A. Allerman
Paul G. Kotula
Mary A. Miller
Carlos Anthony Sanchez
Albert G. Baca
Erica A. Douglas
Mary H. Crawford
Source :: ECS Journal of Solid State Science and Technology. 6:S3067-S3071
Publication Year :: 2017
Publisher :: The Electrochemical Society, 2017.

Subjects :: 010302 applied physics
Materials science
business.industry
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Planar
law
0103 physical sciences
Optoelectronics
0210 nano-technology
business
High electron
Ohmic contact

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