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Oscillation phenomenon in thick-film CO sensor
- Source :
- IEEE Transactions on Electron Devices. 26:219-223
- Publication Year :
- 1979
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1979.
-
Abstract
- An oscillation phenomenon in ThO 2 -doped SnO 2 prepared by thick-film technology has been studied. The oscillation consists of two components at high sample temperature (210-230°C). When the sample temperature is kept at 210°C, a single-component oscillation with a sawtooth waveform starts to appear as CO-gas concentration increases. The activation energies of the surface reaction are 28.9 kcal/mol and 11.9 kcal/mol at the sample temperatures of 180-200°C and 210-230°C, respectively. From these experiments, it has been found that the coverage of oxygen on the surface plays an important role in establishing the oscillatory states.
Details
- ISSN :
- 00189383
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........8a843a0ee83f88f9309b242aaaa8a0bd