Back to Search Start Over

Oscillation phenomenon in thick-film CO sensor

Authors :
M. Nitta
M. Haradome
Source :
IEEE Transactions on Electron Devices. 26:219-223
Publication Year :
1979
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1979.

Abstract

An oscillation phenomenon in ThO 2 -doped SnO 2 prepared by thick-film technology has been studied. The oscillation consists of two components at high sample temperature (210-230°C). When the sample temperature is kept at 210°C, a single-component oscillation with a sawtooth waveform starts to appear as CO-gas concentration increases. The activation energies of the surface reaction are 28.9 kcal/mol and 11.9 kcal/mol at the sample temperatures of 180-200°C and 210-230°C, respectively. From these experiments, it has been found that the coverage of oxygen on the surface plays an important role in establishing the oscillatory states.

Details

ISSN :
00189383
Volume :
26
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........8a843a0ee83f88f9309b242aaaa8a0bd