Fabrication of a superconducting flux flow transistor with a serial-channel structure by an AFM lithography method

Atomic force microscopy (AFM) has become an attractive technique to fabricate nano devices since the observing mechanism is different from fabricating one. We have fabricated the superconducting flux flow transistor (SFFT) with a serial-channel structure using the AFM lithography analyzed the modified surface by the AFM image. We investigated the induced voltage in a serial-channel terminals dependence on the gate current by the I–V measurement system. We performed the numerical simulation to get the theoretical characteristics of the SFFT controlled by the gate current via the modified channel. The transresistance was 0.006 Ω for Id=51 mA at Ig=5 mA. It is very low transresistance in comparison with SFFTs fabricated by the other processes, however our results show that the SFFT with a serial-channel structure is effectively fabricated by an AFM lithography method.