Electrical Properties of High-κ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation

This paper demonstrates the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with high-κ praseodymium oxide (Pr2O3) gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into amorphous silicon (α-Si) film to passivate the grain boundary trap states during solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of the Pr2O3 poly-Si TFT implanted with the nitrogen dosage of 5×1012 cm-2 could be greatly improved. In addition, a better hot-harrier immunity of high-κ Pr2O3 poly-Si TFT could be also obtained.