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Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C2C1-C2C4
- Publication Year :
- 2010
- Publisher :
- American Vacuum Society, 2010.
-
Abstract
- The authors proposed a simple fabrication technique of field emitter array based on a ion-induced bending (IIB) phenomenon. This technique is a very simple two-step process, involving the formation of a cantilever and subsequent ion irradiation. To form a vertical thin film emitter with practical ion dose, however, only a few specific film materials with limited thickness can be used. Therefore, an enhancement method of the IIB phenomenon is necessary. To enhance the IIB phenomenon, the authors proposed the double-layered film method. It was found that the ion-induced bending effect could be extremely enhanced by using a double-layered film method. The required dose could consequently be decreased to less than 5×1015cm−2 in the case of using a heavy element for the cantilever film. This methodology increases the potential of ion-induced bending as a simple fabrication technique for FEA device structures.
- Subjects :
- Cantilever
Fabrication
Materials science
business.industry
Process Chemistry and Technology
Field emitter array
Analytical chemistry
Bending
Finite element method
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ion
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
Thin film
business
Instrumentation
Common emitter
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........89a0133050cf84399e41dc886cab2d7b