Optical Constants of CuInSe2Thin Films Prepared by Two-Stage Process

Thin film CuInSe2 chalcopyrite semiconductors have been prepared on glass substrates by means of two-stage process. The structural properties and atomic compositions of films were determined by energy-dispersive analysis of x-rays (EDAX) and x-ray diffraction (XRD) measurements. Reflectance and transmittance measurements were performed on the films in the photon wavelength range of 300–2200 nm. The samples used in the measurements have different Cu/In ratios. The reflectance and transmittance spectra were analyzed on the basis of multiple reflection model considering the absorbing film on a non-absorbing substrate and then complex refractive-index n*(E) = n(E) + ik(E) and complex dielectric constant e*(E) = e1(E) + ie2(E) were determined. It has been concluded that the films having higher Cu/In ratios show stronger absorption at low photon energy region than those having lower Cu/In ratios.