Back to Search
Start Over
Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE
- Source :
- Materials Science and Engineering: B. 59:84-87
- Publication Year :
- 1999
- Publisher :
- Elsevier BV, 1999.
-
Abstract
- Epitaxial aluminum nitride AlN(0001) thin films have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si(111). The influence of the composition of the nitrogen plasma on the crystal quality, as judged by X-ray diffractometry (XRD) and atomic force microscopy (AFM), has been investigated. Under an Al/N vapor phase ratio close to unity atomically smooth AIN films have been grown at 850°C substrate temperature with maximum growth rates of 2.5 nm min - 1 . A √3 × √3 and a more Al-rich 2 × 6-surface reconstruction have been observed. Transmission electron microscopy (TEM) investigations show that these films are homogeneous 2H-AIN single crystals. Their defect structure consists of threading dislocations mostly. The hetero-interface is abrupt and flat. Processed high-resolution (HR) TEM images demonstrate a 4×d Si(T10) to 5 × d AlN(2110) coincidence between substrate and epilayer. The XRD FWHM of the (0002)-diffraction peak of 0.5 μm AIN is 0.06° in the ω/2 scan and 0.32° in the ω scan. Phonon modes of AIN have been detected by Raman and infra-red spectroscopy.
Details
- ISSN :
- 09215107
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- Materials Science and Engineering: B
- Accession number :
- edsair.doi...........894bc2ee2b4f6c31623642228e5b7ffb