Growth of high-indium-content InGaN:Mg thin films by MBE method with dual RF nitrogen plasma cells

Mg-doped high-In-content In x Ga1− x N (x ∼ 0.35) thin films were grown on a c-face sapphire substrate using an MBE apparatus having dual RF nitrogen plasma cells. The films showed p-type conduction under certain cell temperatures of Mg. The p-type conduction was confirmed by electrolyte-based capacitance–voltage measurement on an In x Ga1− x N:Mg/In2O3/sapphire structure, in addition to thermo-electromotive force measurements.