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离子注入和固相外延制备Si1-x-yGexCy半导体薄膜
- Source :
- Acta Physica Sinica. 51:2340
- Publication Year :
- 2002
- Publisher :
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 2002.
-
Abstract
- Si1-x-yGexCy ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequest solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (MR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer.
- Subjects :
- Materials science
Silicon
Annealing (metallurgy)
Alloy
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
engineering.material
Epitaxy
symbols.namesake
Ion implantation
chemistry
engineering
symbols
Rutherford scattering
Fourier transform infrared spectroscopy
Thin film
Subjects
Details
- ISSN :
- 10003290
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Acta Physica Sinica
- Accession number :
- edsair.doi...........893cbd12e700b5a89cae54462bced029