Bowing of 100[μm] Level Thickness of n-Type Silicon Wafer for Commercialization in PV Cell and Module Process

29th European Photovoltaic Solar Energy Conference and Exhibition; 3283-3284
The maximum efficiency of solar cell and reduction of production costs have been topic among those who work in the area of solar cell since the solar cell has been commercialized as photovoltaic power generation. Although the solar cell using p-type wafer has been centre of the studies till now, there are more interests on solar cell using n-type wafer recently. The thickness of wafer used in solar cell is getting thinner. If the type and thickness of wafer changes, the substances, such on pastes, used in front and back surface will be chosen and they lead to bowing seriously on the thickness of the wafer approaches to 100[] level. In this paper, we have analyzed the thermal expansion of substances used in 156×156 solar cell of the n-type wafer ranging from 100~200[]. Theory has been compared for both 140[] and 130[] thicknesses for possible mass commercialization through ANSYS to predict bowing.