Temperature Effect of a Heterojunction Bipolar Transistor (HBT) with an Emitter-Edge-Thinning Structure

The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 ~ 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.