Charge carrier decay processes in a-Si:H studied with transient photoconductivity techniques

Photoconductivity transients in a-Si: H measured in coplanar electrode geometry (PC) and measured with the time-resolved microwave conductivity (TRMC) method are identical. It can be concluded that with these techniques the dynamics of excess free electrons are investigated, where the influence of contacts in the PC-method can be neglected. The dependence of the signals on the exciting light density lead to a tentative recombination model.