An Improved Method for the Electrochemical C‐V Profiling of Indium Phosphide

C-V analysis of n-type InP using metal-semiconductor Schottky contacts is inadequate for determining free carrier concentration vs. depth profiles due to low barrier heights, uncontrolled oxide formation, and metal semiconductor chemical reactions. Concentration vs. depth profiles can be obtained over a wide range of carrier concentrations to virtually unlimited depth using electrochemical C-V (ECV) analysis. However, the 0.5M HCl in aqueous solution reported in the literature is not ideal for the anodic dissolution of InP. This work reports an improved anodic etchant for ECV profiling of n-type InP and the design of a constant current etch, difference method ECV profiler utilizing a new sample mounting technique.