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Surface photovoltage spectroscopy of semi-insulating GaAs in the 800–1100 nm range
- Source :
- Applied Physics Letters. 79:1715-1717
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- Surface photovoltage spectroscopy (SPS) studies on thick semi-insulating (SI) GaAs wafers have been done in the range 800–1100 nm using chopped light geometry. SPS peaks at 880 nm, 900 nm, and a broadband in the range 930–1080 nm have been observed. These observations are important as SPS is routinely used to study absorption-related features in InAs self-organized quantum dots grown on SI GaAs. The effect of the ambient and chopping frequencies on SPS spectra is also presented.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 79
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........88a59e7a039250333d1195b42894c30a