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Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process
- Source :
- Ceramics International. 45:17556-17561
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.
- Subjects :
- Materials science
Silicon
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Electron
Conductivity
01 natural sciences
chemistry.chemical_compound
stomatognathic system
Photovoltaics
0103 physical sciences
Materials Chemistry
Silicon carbide
Quantum tunnelling
010302 applied physics
business.industry
Process Chemistry and Technology
Charge (physics)
Heterojunction
021001 nanoscience & nanotechnology
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Ceramics and Composites
0210 nano-technology
business
Subjects
Details
- ISSN :
- 02728842
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Ceramics International
- Accession number :
- edsair.doi...........88253a389dd43e305b83cfed4c048e3d