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Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
- Source :
- Semiconductors. 53:1568-1572
- Publication Year :
- 2019
- Publisher :
- Pleiades Publishing Ltd, 2019.
-
Abstract
- Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1.
- Subjects :
- 010302 applied physics
Range (particle radiation)
Materials science
Infrasound
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Power (physics)
law.invention
Gate oxide
Saturation current
law
0103 physical sciences
Irradiation
Atomic physics
0210 nano-technology
Order of magnitude
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 53
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........8810a97f2d156ec3b8ea81c73c6ec05d