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Incorporation of sulfur into hydrogenated amorphous carbon films
- Source :
- Diamond and Related Materials. 13:1377-1384
- Publication Year :
- 2004
- Publisher :
- Elsevier BV, 2004.
-
Abstract
- Amorphous hydrogenated carbon–sulfur thin films (a-C:H:S) were deposited from CH yH S gas mixtures by capacitively42 coupled radio-frequency PECVD. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to probe the composition of the films. XPS showed that the sulfur atomic percentage within a film was proportional to the fraction of H S in the H SyCH gas mixture, and that films had been deposited with a sulfur content of up to 27 at.%. SIMS 22 4 showed that the distribution of C and S was homogeneous throughout the films. Ex situ variable angle spectroscopic ellipsometry was used to evaluate the band gap energy variation by three different methods. Values of the E04 band gap for these films were between 1.5 and 2.5 eV, with refractive index values of between 1.8 and 2.1. Laser Raman spectroscopy (514.5 nm) suggested that the addition of sulfur increases the clustering of aromatic six-membered rings. 2003 Elsevier B.V. All rights reserved.
- Subjects :
- Band gap
Mechanical Engineering
Analytical chemistry
chemistry.chemical_element
General Chemistry
Sulfur
Electronic, Optical and Magnetic Materials
Amorphous solid
Secondary ion mass spectrometry
symbols.namesake
Amorphous carbon
X-ray photoelectron spectroscopy
chemistry
Plasma-enhanced chemical vapor deposition
Materials Chemistry
symbols
Electrical and Electronic Engineering
Raman spectroscopy
Subjects
Details
- ISSN :
- 09259635
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Diamond and Related Materials
- Accession number :
- edsair.doi...........878566808ea8820b37018c4d72a00e40
- Full Text :
- https://doi.org/10.1016/j.diamond.2003.08.026