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Ultra-thin film a-Si:H transistors
- Source :
- Journal of Non-Crystalline Solids. :1397-1400
- Publication Year :
- 1985
- Publisher :
- Elsevier BV, 1985.
-
Abstract
- A new approach for improving a-Si:H transistors has been proposed. The concept is based on the size effects and quantum mechanical effects that will appear in an ultra-thin a-Si:H layer. Experimental results including those on a 10nm-thick transistor performance are described, and a two-step deposition method suitable for ultra-thin a-Si:H film is proposed.
Details
- ISSN :
- 00223093
- Database :
- OpenAIRE
- Journal :
- Journal of Non-Crystalline Solids
- Accession number :
- edsair.doi...........8780bce15b20745ff8cf301ca5f096e5