New experimental evidence of latent interface-trap buildup in power VDMOSFETs

The paper presents new experimental evidence of the latent interface-trap buildup during annealing of gamma-ray irradiated power VDMOSFETs. We try to reveal the nature of this still ill-understood phenomenon by isothermal annealing, switching temperature annealing and switching bias annealing experiments. Possible explanations of obtained experimental results are discussed in the context of several models for post-irradiation behavior of radiation-induced defects.