Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors

This paper presents a study of the physicochemical and the dielectric characteristics of capacitor structures, with an organosilicate polymer fabricated by initiated chemical vapor deposition as dielectric. The polymer evaluated is the poly(trivinyltrimethylcyclotrisiloxane), and a comparative study on different bottom electrodes was performed. Preliminary results demonstrate that iCVD technique permits the deposition of low roughness, low defect and uniform polymer films, and the dielectric fabricated exhibits a high breakdown field and an original dielectric behaviour, which makes it a prominent candidate for high voltage 3D capacitors.