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Impact of plasma processing on integrated circuit technology migration: From 1 μm to 100 nm and beyond

Authors :
Shinichi Tachi
Source :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:S131-S138
Publication Year :
2003
Publisher :
American Vacuum Society, 2003.

Abstract

Plasma processing has been a key technology for large-volume integrated circuit manufacturing for more than 30 years. In particular, various configurations of plasma reactors, along with a range of plasma chemistries, have enabled high-throughput anisotropic and selective etching of materials with attendant precision transfer of resist patterns for feature sizes from 1 μm down to 100 nm and below. This article surveys the historical developments in oxide, metal, gate, and crystalline silicon etching, along with future challenges.

Details

ISSN :
15208559 and 07342101
Volume :
21
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Accession number :
edsair.doi...........873ea32bca0566bccff25f7c5b1700f6
Full Text :
https://doi.org/10.1116/1.1601611