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Impact of plasma processing on integrated circuit technology migration: From 1 μm to 100 nm and beyond
- Source :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:S131-S138
- Publication Year :
- 2003
- Publisher :
- American Vacuum Society, 2003.
-
Abstract
- Plasma processing has been a key technology for large-volume integrated circuit manufacturing for more than 30 years. In particular, various configurations of plasma reactors, along with a range of plasma chemistries, have enabled high-throughput anisotropic and selective etching of materials with attendant precision transfer of resist patterns for feature sizes from 1 μm down to 100 nm and below. This article surveys the historical developments in oxide, metal, gate, and crystalline silicon etching, along with future challenges.
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 21
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi...........873ea32bca0566bccff25f7c5b1700f6
- Full Text :
- https://doi.org/10.1116/1.1601611