Back to Search Start Over

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

Authors :
Jing-Yi Yan
Wu-Wei Tsai
Tien-Yu Hsieh
Ann-Kuo Chu
Ming-Yen Tsai
Te-Chih Chen
Wen-Jen Chiang
Ting-Chang Chang
Kun-Yao Lin
Source :
Applied Physics Letters. 103:012101
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Details

ISSN :
10773118 and 00036951
Volume :
103
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........8732404fd594f4d7bceaede8acfa4e6c