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CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
- Source :
- Acta Physica Polonica A. 124:768-771
- Publication Year :
- 2013
- Publisher :
- Institute of Physics, Polish Academy of Sciences, 2013.
-
Abstract
- Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as d002 interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
- Subjects :
- Surface (mathematics)
Materials science
Graphene
business.industry
General Physics and Astronomy
Chemical vapor deposition
Substrate (electronics)
law.invention
symbols.namesake
Few layer graphene
Optics
Independent channels
law
X-ray crystallography
symbols
Optoelectronics
Raman spectroscopy
business
Subjects
Details
- ISSN :
- 1898794X and 05874246
- Volume :
- 124
- Database :
- OpenAIRE
- Journal :
- Acta Physica Polonica A
- Accession number :
- edsair.doi...........86c2f6f4eeacfe87a765a7b466de88a1