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Impact of extension and source/drain resistance on FinFET performance
- Source :
- 2008 IEEE International SOI Conference.
- Publication Year :
- 2008
- Publisher :
- IEEE, 2008.
-
Abstract
- The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for TfinLt25 nm and also causes the Rp variability due to the Tfin variation.
Details
- Database :
- OpenAIRE
- Journal :
- 2008 IEEE International SOI Conference
- Accession number :
- edsair.doi...........86ae34e0bbe5982beb0c97a11dc69906
- Full Text :
- https://doi.org/10.1109/soi.2008.4656343