Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)

Magnetization switching was observed in real time in voltage-control spintronics memory (VoCSM), which utilizes a hybrid writing method that combines spin–orbit torque and voltage-controlled magnetic anisotropy (VCMA). VCMA lowers the switching energy barrier between parallel and antiparallel states, leading to a reduction in the write current and acceleration of magnetization switching. Real-time observation revealed that this acceleration of magnetization switching was accomplished by reducing the incubation and switching times. Using this writing method, high write durability was realized over 1013 write cycles using 2-ns write pulses. These results indicate that VoCSM realizes high speed and highly reliable switching with low power consumption and has the potential to shape next-generation computing systems.Magnetization switching was observed in real time in voltage-control spintronics memory (VoCSM), which utilizes a hybrid writing method that combines spin–orbit torque and voltage-controlled magnetic anisotropy (VCMA). VCMA lowers the switching energy barrier between parallel and antiparallel states, leading to a reduction in the write current and acceleration of magnetization switching. Real-time observation revealed that this acceleration of magnetization switching was accomplished by reducing the incubation and switching times. Using this writing method, high write durability was realized over 1013 write cycles using 2-ns write pulses. These results indicate that VoCSM realizes high speed and highly reliable switching with low power consumption and has the potential to shape next-generation computing systems.