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First-Principle Study of the Electronic and Optical Properties of Ti Doped ZnS

Authors :
Jian Xiong Xie
Chang Peng Chen
Jiafu Wang
Source :
Advanced Materials Research. :173-176
Publication Year :
2012
Publisher :
Trans Tech Publications, Ltd., 2012.

Abstract

Based on the density functional pseudopotential method, the electronic structures and the optical properties for Ti doped ZnS are investigated in detail. The calculation results indicate that the doping of Ti widens the band gap of ZnS and the Fermi level shifts upward into the conduction band. The impurity elements form new highly localized impurity energy level at the bottom of the conduction band near the Fermi level.,.Meanwhile, blue shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps.

Details

ISSN :
16628985
Database :
OpenAIRE
Journal :
Advanced Materials Research
Accession number :
edsair.doi...........86686c14e08666c341ebc2f0c6575ab2
Full Text :
https://doi.org/10.4028/www.scientific.net/amr.430-432.173