Effect of Hydrogen Radical Treatment on Si Surface Passivated by O3-Base ALD AlOx

28th European Photovoltaic Solar Energy Conference and Exhibition; 1689-1691
The post deposition hydrogen radical (H•) treatment was employed for aluminum oxide (AlOx) to improve the passivation properties for p-Si. The maximum surface recombination velocity (Smax) at the AlOx/Si interface was significantly improved mainly thanks to the negative fixed charge increase in the AlOx film. The improvement was effective especially for the room temperature deposited AlOx film, therefore we believe the H• treatment has a potential to reduce the production cost.