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Tungstic acid-assisted thermal oxidation of GaAs

Authors :
A. V. Popelo
I. Ya. Mittova
T. V. Kharitonova
A. N. Lukin
S. S. Lavrushina
Source :
Russian Microelectronics. 36:366-370
Publication Year :
2007
Publisher :
Pleiades Publishing Ltd, 2007.

Abstract

An experiment is conducted to investigate the influence of tungstic acid, H2WO4, on the growth mechanism of thermal-oxide thin films on GaAs. It is established that feeding H2WO4 into the reaction zone leads to incorporation of W into the oxide and formation of heteropoly compounds.

Subjects

Subjects :
Thermal oxidation
chemistry.chemical_compound
Materials science
chemistry
Chemical engineering
Materials Chemistry
Reaction zone
Oxide
Tungstic acid
Electrical and Electronic Engineering
Thin film
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Details

ISSN :
16083415 and 10637397
Volume :
36
Database :
OpenAIRE
Journal :
Russian Microelectronics
Accession number :
edsair.doi...........8602b89d7c9e01e103686ff67bd8b95a
Full Text :
https://doi.org/10.1134/s1063739707060030
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