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Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED
- Source :
- Applied Physics A. 93:705-710
- Publication Year :
- 2008
- Publisher :
- Springer Science and Business Media LLC, 2008.
-
Abstract
- Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is produced by PLD directly from a TiN target. At the initial stage of the growth (average thickness ∼2.4 nm) the formation of islands is observed. During the continuous growth the islands merge into a smooth surface as indicated by the RHEED, atomic force microscopy and field emission scanning electron microscopy. These observations are in good agreement with the three-dimensional Volmer–Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED pattern as well.
- Subjects :
- Materials science
Reflection high-energy electron diffraction
Analytical chemistry
chemistry.chemical_element
General Chemistry
Titanium nitride
Pulsed laser deposition
chemistry.chemical_compound
Crystallography
chemistry
Electron diffraction
General Materials Science
Specular reflection
Crystallite
Thin film
Tin
Subjects
Details
- ISSN :
- 14320630 and 09478396
- Volume :
- 93
- Database :
- OpenAIRE
- Journal :
- Applied Physics A
- Accession number :
- edsair.doi...........85e69300af1ce33f361975c4bb54ab58