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Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas
- Source :
- Physica B: Condensed Matter. 514:78-84
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.
- Subjects :
- Materials science
Hydrogen
Band gap
Nickel oxide
Non-blocking I/O
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Ultraviolet visible spectroscopy
chemistry
Sputtering
Crystallite
Electrical and Electronic Engineering
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 09214526
- Volume :
- 514
- Database :
- OpenAIRE
- Journal :
- Physica B: Condensed Matter
- Accession number :
- edsair.doi...........854cb016a0370e629a8f507367529cb3
- Full Text :
- https://doi.org/10.1016/j.physb.2017.03.037