Cite
Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures
MLA
K. Cico, et al. “Rapid Thermal Annealing and Performance of Al2O3/GaN Metal-Oxide-Semiconductor Structures.” 2006 International Conference on Advanced Semiconductor Devices and Microsystems, Oct. 2006. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........84e5cc673a0da818f05492c4527869de&authtype=sso&custid=ns315887.
APA
K. Cico, Tibor Lalinsky, Alexandros Georgakilas, Jan Kuzmik, Karol Fröhlich, Dionyz Pogany, & Dagmar Gregušová. (2006). Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. 2006 International Conference on Advanced Semiconductor Devices and Microsystems.
Chicago
K. Cico, Tibor Lalinsky, Alexandros Georgakilas, Jan Kuzmik, Karol Fröhlich, Dionyz Pogany, and Dagmar Gregušová. 2006. “Rapid Thermal Annealing and Performance of Al2O3/GaN Metal-Oxide-Semiconductor Structures.” 2006 International Conference on Advanced Semiconductor Devices and Microsystems, October. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........84e5cc673a0da818f05492c4527869de&authtype=sso&custid=ns315887.