DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess

Authors :: Hyun-Wook Jung
Hyung Sup Yoon
Seong-Il Kim
Kyu-Jun Cho
Sung-Jae Chang
Haecheon Kim
Jong-Won Lim
Jae-Won Do
Byoung-Gue Min
Jeong Jin Kim
Ho-Sang Kwon
Hokyun Ahn
Jin-Mo Yang
Source :: ECS Journal of Solid State Science and Technology. 7:P197-P200
Publication Year :: 2018
Publisher :: The Electrochemical Society, 2018.

Subjects :: 010302 applied physics
Materials science
business.industry
Mode (statistics)
chemistry.chemical_element
Algan gan
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
chemistry
0103 physical sciences
Fluorine
Optoelectronics
0210 nano-technology
business

Tools