ALD metal-gate/high-κ gate stack for Si and Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFETs

MLA

A.-C. Lindgren, et al. “ALD Metal-Gate/High-κ Gate Stack for Si and Si/Sub 0.7/Ge/Sub 0.3/ Surface-Channel PMOSFETs.” Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710), Mar. 2004. EBSCOhost, https://doi.org/10.1109/essderc.2003.1256864.

APA

A.-C. Lindgren, Eva Tois, Dongping Wu, Mikael Östling, Gustaf Sjöblom, S.-L. Zhang, Wei-Min Li, Jörgen Olsson, P.-E. Hellstrom, Marko Tuominen, E. Vainonen-Ahlgren, & S. Persson. (2004). ALD metal-gate/high-κ gate stack for Si and Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFETs. Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710). https://doi.org/10.1109/essderc.2003.1256864

Chicago

A.-C. Lindgren, Eva Tois, Dongping Wu, Mikael Östling, Gustaf Sjöblom, S.-L. Zhang, Wei-Min Li, et al. 2004. “ALD Metal-Gate/High-κ Gate Stack for Si and Si/Sub 0.7/Ge/Sub 0.3/ Surface-Channel PMOSFETs.” Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710), March. doi:10.1109/essderc.2003.1256864.